Low Temperature Sensors
The DT-Series Silicon Diode Temperature Sensors introduced by FUTURE QUANTUM use a special silicon diode chip, which has more stable low temperature operating characteristics than previous silicon diodes in the market. In the temperature measurement range of 1.8 K~325 K, DT-series follow the standard voltage-temperature response curve, with higher temperature sensitivity below 30 K, which is suitable for very low temperature measurement, and at the same time, it has good interchangeability, and does not need to be individually calibrated in general applications.
|
Recommended excitation |
10μA±0.01μA |
|
Maximum Reverse Voltage |
70V |
|
Maximum current for damage |
Continuous 1mA or pulsed 100mA |
|
Power consumption at 10μA excitation |
16μW@4.2K;10μW@77K;5μW@300K |
|
SD package response time |
10ms@4.2K;100ms@77K;200ms@305K |
|
Repeatability |
±15mK@77K |
|
Magnetic field effects |
Recommended for use in magnetic fields only at low 50K temperatures, thermometer mounting surface |
|
Radiation Effects |
Recommended for use in low levels of radiation only |
Product features
Small excitation current, negligible self-heating effect
Conform to the standard curve, good interchangeability
High accuracy in the temperature range of 1.8K-325K.
Individual calibration is available for more accurate temperature measurement.
Compatible with LakeShore, Cryocon, Oxford and other manufacturers of temperature controllers.
Technical specifications
|
Standard Curve |
DT-Series, see Figure 1 |
|
Recommended excitation |
10 µA±0.01 µA |
|
Maximum Reverse Voltage |
70V |
|
Maximum current for damage |
1 mA continuous or 100 mA pulsed |
|
Power consumption at 10 µA excitation |
10 μW@4.2 K; 10μW@77 K;5μW@300 K |
|
SD Package Response Time |
10 ms@4.2 K;100 ms@77 K;200 ms@305 K |
|
Repeatability |
±15 mK@77 K |
|
Magnetic field effects |
Recommended for use in magnetic fields at low temperatures of 50 K only, thermometer mounting surface |
|
Radiation effects |
Recommended for use in low levels of radiation only |
Temperature Response Data Sheet (typical)
|
Temperature |
V (volts) |
dv/dT(mV/k) |
|
1.8K |
1.66 |
-13.2 |
|
4.2K |
1.59 |
-30.6 |
|
10K |
1.39 |
-27.1 |
|
77K |
1.02 |
-2.0 |
|
305K |
0.55 |
-2.3 |
|
Physical Specifications |
Mass |
Wire Type |
Sensor Material |
|
DT-TO |
400 mg |
Phosphor Bronze Twisted Pair |
Ceramic Gold-Plated Package |
|
DT-BR (bare) |
85 μg |
None |
Silicon |
|
DT-SD |
40 mg |
Phosphor Bronze Twisted Pair |
Sapphire Substrate, Ceramic Body Cap Gold Plated |
Standard Curve Tolerance Zones and Temperature Measurement Accuracy
|
Tolerance Band Grade |
2K~77 K |
77 K~305 K |
|
C |
±1K |
±1K |
|
B |
±0.5 K |
±0.5 K |
|
A |
±0.25 K |
±0.25 K |
|
Independent calibration |
±20 mK |
±40 mK |
Notes:
Short-term repeatability is achieved by repeatedly subjecting the sensor to 305K to 4.2K thermal shocks.
Long-term repeatability is achieved by applying 200 thermal shocks from 305K to 77K to the sensor.
Sensor accuracy: (calibration uncertainty2 + repeatability2)^0.5