Product introduction
The DX-50 Hall Effect System is a lab-grade solution designed for precise characterization of semiconductor materials. Built with a variable electromagnet and a dedicated DX-320 sourcemeter, it enables fast, accurate measurement of carrier concentration, mobility, resistivity, Hall coefficient, and more. Its automated software simplifies testing and data export, making it ideal for universities, R&D centers, and semiconductor labs. Compatible with materials such as graphene, InP, GaN, and SiC, this system supports both low and high-resistance samples. Designed for long-term use and reliability, it meets the demanding needs of advanced material research.
The DX-50 Hall Effect Testing System is suitable for studying the electrical properties of semiconductor devices and semiconductor materials. Experimental results are automatically calculated by the software, allowing simultaneous determination of parameters such as bulk carrier concentration, surface carrier concentration, mobility, resistivity, Hall coefficient, magneto-resistance, and more.
The Hall effect system consists of an electromagnet, high-precision power supply, connecting cables, high-precision constant current source, high-precision voltmeter, gaussmeter, standard samples, sample mounting bracket, and system software.

The DX-320 effect meter specially developed for this instrument system assembles a constant current source and a switch (a six-and-a-half microvoltmeter and a Hall-complex switching relay) into one. Greatly reduced the connection and operation of the experiment. The DX-320 can be used alone as a constant stream and a microvolt.
Parameters of Hall effect measurement system
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Physical parameters |
Carrier concentration |
10³cm⁻³ - 10²³cm⁻³ |
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Mobility |
0 .1 cm²/ volt*sec - 10⁸cm²/ volt*sec |
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Resistivity range |
10⁻⁷ Ohm*cm - 10¹² Ohm*cm |
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Hall voltage |
1 uV - 3V |
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Hall coefficient |
10⁻⁵ - 10²⁷cm³/ C |
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Testable material type |
Semiconductor material |
SiGe, SiC, InAs, InGaAs, InP,AlGaAs, HgCdTe and ferrite materials etc. |
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low resistance material |
Graphene, metals, transparent oxides, weakly magnetic semiconductor materials, TMR materials, etc. |
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high resistance material |
Semi-insulating GaAs, GaN, CdTe, etc. |
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Material Conductive Particles |
Type P and Type N testing of materials |
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Magnetic field environment |
Magnet Type |
Variable electromagnet |
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Magnitude of magnetic field |
1070mT (The pole pitch is 10mm) |
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Uniform area |
1% |
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Optional magnetic environment |
The electromagnet of relevant magnetic size can be customized according to the needs of customers |
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Electrical parameters |
Current source |
50.00nA- 50.00mA |
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Current source resolution |
0.0001uA |
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Measuring voltage |
0 ~ ±3V |
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Voltage measurement resolution |
0.0001 mV |
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Other Accessories |
Shading |
Extern ally installed light-shielding parts make the test material more stable |
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Sample size |
Maximum 30mm * 30mm |
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Box cabinet |
600*600*1000mm |
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Test piece |
Hall effect of Institute of Semiconductors, Chinese Academy of Sciences Standard test samples and data: 1 set |
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Making ohmic contacts |
Electric soldering iron, indium chip, solder, enameled wire, etc. |
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One-button automatic measurement can be performed without the need for human operation after the test is started |
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The software can perform I-V curve and BV curve |
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Set in software for automatic temperature measurement |
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The experimental results are measured, and the data will be temporarily saved in the software. If long-term storage is required, the data can be exported to an EXCEL table to facilitate later data processing. |
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Provide the Hall effect standard test samples and data of the Institute of Semiconductors, Chinese Academy of Sciences: 1 set |
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Testable samples of hall measurement system


Sample Stage of DX-50 Hall Effect Measurement System
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